BJT: zvese zvaunoda kuziva nezve bipolar transistor

Mauri electronic components chikamu Takatotaura zvakakwana pamusoro pemhando dzakasiyana dzekutengesa transistors. Ikozvino yave nguva yekuzama zvakadzama mu transistor inoshandiswa zvakanyanya, imhuri ye BJT transistors, ndiko kuti, bipolar transistors, iripo mune zvakawanda zvemagetsi zvigadzirwa zvatinoshandisa zuva nezuva.

Saka unogona dzidza zvakawanda nezve aya ma transistors uye misiyano ine unipolar...

Chii chinonzi semiconductor?

ari semiconductors Izvo zvinhu zvine magetsi conductivity pakati pemaconductors uye ayo e insulators. Kusiyana nesimbi (maconductor akanaka) uye asiri-simbi (insulators kana dielectrics), semiconductors inotora nzvimbo yakasarudzika inovabvumira kushandiswa kudzora kuyerera kwemagetsi ikozvino.

Su chimiro chekristaro, kazhinji inoumbwa nezvinhu zvakaita sesilicon kana germanium, yakakosha kuti unzwisise maitiro ayo. Maatomu ezvishandiso izvi anoumba chimiro chekristaro umo maerekitironi anogovaniswa pakati peatomu mumabhandi esimba. Valence bhendi rine maerekitironi akasungwa zvakasimba kumaatomu, nepo conduction bhendi ine maerekitironi anogona kufamba akasununguka.

ari semiconductor zvinhu Izvo zvakakosha mukugadzirwa kwezvigadzirwa zvemagetsi zvepamberi. Silicon, iri imwe yeanonyanya kushandiswa semiconductors, inowanikwa kwese muindasitiri uye inoumba hwaro hwemachipisi uye microprocessors. Pamusoro pesilicon, germanium imwe yakajairika semiconductor zvinhu izvo zvakashandiswa mukare matekinoroji. Semiconductor makemikari akadai gallium arsenide (GaAs) uye phosphorene akawanawo kukosha, kunyanya mu-high-frequency uye optoelectronic applications. Zvinhu izvi zvinogonesa kugadzirwa kwemidziyo yakaita sechiedza-emitting diodes (LEDs), high-frequency transistors uye ma sensors epamusoro, achiratidza kusimba uye simba rema semiconductors ari pamberi pehunyanzvi hwekuvandudza tekinoroji.

Cargo vatakuri uye kutyaira kwemagetsi

La kugona kwema semiconductors kuitisa magetsi iri mukukwanisa kwayo kugadzira zvinotakura zvinochaja. Vatakuri vechaji vanogona kubhadhariswa maerekitironi zvisina kunaka kana "maburi" anochajiwa zvakanaka, anobva kumaerekitironi akatamiswa kubva mubhendi revalence kuenda kubhendi rekufambisa.

Kana magetsi akaiswa kune semiconductor, maerekitironi inogona kufamba kubva pavalence bhendi kuenda kune conduction bhendi, kugadzira magetsi. Ichi chiitiko chinozivikanwa seelectronic conduction uye chakakosha pakushanda kwemidziyo yemagetsi.

Dopants (tsvina)

Kuvandudza uye kutonga magetsi emagetsi e semiconductors, Kusvibiswa kwemaune kunopinzwa mugirazi kuburikidza nenzira inonzi doping. Iyo dopant maatomu inogona kuva yemhando yevanopa (kuwedzera maerekitironi) kana yemhando yekugamuchira (kugadzira maburi), ndiko kuti, yekutanga yaizova inonzi N-mhando semiconductors uye yechipiri P-mhando semiconductors.

Dopants inounza mamwe mazinga esimba mu bhendi rakarambidzwa, zvichibvumira kutonga kukuru pamusoro pekutyaira kwemagetsi. Mimwe mienzaniso yakajairika yemadopants ndeye phosphorus (donor) uye boron (inogamuchirwa) yesilicon. Nenzira iyi, nzvimbo kana majunctions anogona kugadzirwa kugadzira zvishandiso zvakaita se diode, inova iri imwe chete PN junction, kana semiconductors, anowanzo ari mazoni matatu sezvatichaona gare gare.

Mhando dzeSemiconductors: Intrinsic uye Extrinsic

Kune rumwe rutivi, kuti unzwisise BJT, zvakakoshawo kuziva kuti chii mhando dzesemiconductors Izvo zviripo, zvakadai se:

• Intrinsic: Kana pasina tsvina inowedzerwa kune semiconductor, inoiswa seyemukati. Muchiitiko ichi, kushandiswa kwemagetsi kunokonzerwa chete nechizvarwa chekushisa chekutakura vatakuri (electron-hole pairs).
• extrinsic: Iwo mhedzisiro yedoping nemaune netsvina. N-mhando (negative) semiconductors inowanikwa nekuwedzera donor dopants, nepo p-type (positive) semiconductors inoumbwa neanobvuma dopants. Aya maitiro anobvumira magetsi emagetsi e semiconductors kuti agadziriswe zvichienderana nezvinodiwa chaizvo zvekushandisa.

Nhanganyaya kune PN junctions

La PN mhesano Iyo ipfungwa yakakosha mune semiconductor zvemagetsi zvinoisa hwaro hwekusikwa kwemidziyo yakadai sedhiodhi uye transistors. A PN junction inoumbwa apo matunhu maviri e semiconductor zvinhu anoungana. Matunhu aya inzvimbo yerudzi rweP (uko kuzara kwevatakuri vechaji yakanaka kana maburi kwakawanda) uye dunhu reN-rudzi (uko kuzara kwevatakuri vechaji yakaipa kana maerekitironi kwanyanya). Shanduko pakati pematunhu maviri aya inogadzira yakasarudzika interface ine yakakosha magetsi emagetsi.

La kuumbwa kwePN junction Zvinowanzoitika kuburikidza nemaitiro anonzi doping, apo kusvibiswa kwemaune kunounzwa mune semiconductor zvinhu. Munharaunda yeP-mhando, madopants ekugamuchira (akadai seboron) anoshandiswa, nepo munharaunda yeN-mhando, dopants (sefosforasi) inoshandiswa, sezvandambotaura. Iyi nzira inogadzira iyo concentration gradient yevanochaja vatakuri pamharadzano, nekudaro kumisa chinogona kuvharira.

Kana ari maitiro yeiyi PN junction, ine yakasarudzika zvivakwa kana polarized munzira dzakasiyana:

• En mberi polarization, voltage inoiswa munzira inofarira kuyerera kwezvino kuburikidza nejunction. Muchiitiko ichi, vatakuri vemhosva vanofamba vachipfuura nepamusoro pechipingamupinyi, vachibvumira kushandiswa kwemagetsi.
• Pane kupokana, mu reverse polarization, iyo inoshandiswa inoshandiswa inoshanda inopesana nechipingamupinyi chinogona kukanganisa, ichidzivisa kufamba kwezvino. Mune ino mamiriro, iyo PN junction inoita senge diode, ichibvumira conduction mune imwe nzira uye ichivharira kune yakatarisana.

Iyo PN junction ndiyo hwaro hwemidziyo yakawanda yemagetsi. Diodes, semuenzaniso, tora mukana weiyo pfuma yePN junction kubvumira ikozvino kuyerera mune imwe nzira uye kuivharira mune imwe. Transistors, yakakosha kudhijitari logic uye chiratidzo chekusimudzira, zvakare inovakwa uchishandisa akasiyana PN junctions, senge iri nyaya yeBJTs inogona kuve neNPN kana PNP junctions ...

Chii chinonzi BJT transistor?

El bipolar junction transistor (BJT kana Bipolar Junction Transistor) Iyo yakasimba-state yemagetsi mudziyo inoumbwa maviri ari padyo PN junctions, inobvumira kuwedzera ikozvino, kuderera kwevoltage, uye kutonga kwekuyerera kwazvino kuburikidza nematerminal ayo. Kuitisa mumhando iyi ye transistor kunosanganisira kubhadharisa vatakuri vepolarities (positive maburi uye maerekitironi asina kunaka). BJTs anoshandiswa zvakanyanya muanalogi yemagetsi uye mamwe madhijitari emagetsi ekushandisa, akadai seTTL kana BiCMOS tekinoroji.

La Nhoroondo ye bipolar transistors inotangira muna 1947, apo John Bardeen naWalter Houser Brattain vakagadzira point-contact bipolar transistor paBell Telephone Company. Gare gare, William Shockley akagadzira bipolar junction transistor muna 1948. Kunyange zvazvo dzaive dzakakosha kwemakumi emakore, kushandiswa kwadzo kwakaramba kuchifarira tekinoroji yeCMOS mumaseketi akabatanidzwa edhijitari.

Chimiro cheBJT chinosanganisira matunhu matatu:

• Iyo emitter (yakanyanya doped uye inoshanda seyemitter yekuchaja)
• Nheyo (inopfupisa uye inoparadzanisa emitter kubva kumuunganidzi)
• Muunganidzi (kuwedzerwa kukuru).

Epitaxial deposition ndiyo yakajairika kugadzira tekinoroji. Mukushanda kwakajairwa, base-emitter junction inorerekera kumberi, ukuwo base-collector junction iri reverse yakarerekera. Iyo yekushandisa musimboti inosanganisira iyo Polarization yakananga polarization ye base-emitter junction uye reverse polarization ye base-collector junction. Ma electrons anobayiwa kubva kune emitter kuenda kumuunganidzi, zvichibvumira kukwidziridzwa kwechiratidzo. Iyo BJT inoratidzwa nekudzika kwayo yekupinza impedance uye inogona kuenzanisirwa semhepo inodzorwa nevoltage ikozvino sosi kana ikozvino-inodzorwa ikozvino sosi.

Bipolar transistor operation

Kana zviri zvekushanda, tine izvo mune bipolar junction transistor (BJT) muNPN kumisikidza, Base-emitter junction iri mberi polarized uye base-collector junction inodzokera kumashure polarized.. Thermal agitation inobvumira vatakuri vechaji kubva kune emitter kuti vayambuke emitter-base inobvira chipingamupinyi uye vasvike kune muunganidzi, inofambiswa nemunda wemagetsi pakati pechigadziko uye muunganidzi. Mukushanda kwakajairika, base-emitter junction inorerekera mberi, ichibvumira maerekitironi kubaiwa munzvimbo yepasi uye kufamba akananga kumuunganidzi. Nzvimbo yepasi inofanirwa kuve yakatetepa kuti ideredze mutakuri wekubatanidza asati asvika pa base-collector junction. Iyo yekuunganidza-emitter ikozvino inogona kudzorwa neiyo base-emitter ikozvino (ikozvino kutonga) kana ne base-emitter voltage (voltage control). Mune PNP transistor ndiyo imwe nzira yakatenderedza ...

Kusiyana ne unipolar transistor

Transistors inogona kuiswa mumapoka maviri makuru: bipolar uye unipolar. The misiyano mikuru Zvatinowana pakati pezviviri ndezvi:

• BJT kana bipolar: Sezvakangoita unipolar transistors, bipolar transistors zvakare ine yakanaka uye yakaipa kuchaja vatakuri, kureva, neP uye N doped matunhu muchimiro chavo. Kana iri polarization, inogona kuve polarized zvakananga kana kudzosera kumashure, zvichienderana nezvinodiwa, uye inogona kuve NPN kana PNP mhando. Kana ari mamodhi ekushandisa, anogona kushanda mune inoshanda mode, yekucheka maitiro uye saturation mode. Iwo anodzorwa parizvino, uye ane pfuma yazvino inomiririrwa nebhii β (beta). Iko kurasikirwa kwesimba munyaya iyi kwakakwirira kudarika iyo ye unipolar transistors uye kukurumidza kwayo kunowanzo kunonoka kudarika unipolar transistors. Naizvozvo, ivo vanowanzo shandiswa mune analog chiratidzo amplifiers uye yakaderera-frequency switching, pakati pevamwe. BJTs dzinowanzoita ruzha.
• FET kana unipolar: Unipolar kana munda mugumisiro transistors vanoshandisawo kuchaja vatakuri, asi pano tine maerekitironi kana maburi, zvichienderana mhando. Iyo huru polarization pano ndeyekumashure, uye maitiro ekushandisa ari kunyanya mukuzara. Muchiitiko ichi tine voltage controlled transistors. Ikozvino pfuma inomiririrwa munyaya iyi ne transconductance, kurasikirwa kwesimba kuduku pane bipolar, uye ivo vanokurumidza. Nechikonzero ichi, ivo vanowanzo shandiswa kune yakakwira-frequency switching uye dhijitari maseketi. Unipolar haanyanyi kubatwa neruzha.

BJT mhando (NPN uye PNP)

Sezvandakataura muzvikamu zvakawanda zvechinyorwa, pane mhando mbiri huru yeBJT transistors:

• NPN Transistors: Iwo chikamu cheimwe yemhando mbiri dzakakosha dzebipolar transistors, apo mavara "N" uye "P" anoratidza vazhinji vanochaja vatakuri varipo munzvimbo dzakasiyana dzemudziyo. Parizvino, mabipolar transistors akawanda ndeerudzi rweNPN, sezvo kufamba kwemaerekitironi kwakakwirira kudarika kwe “maburi” mumasemiconductors, zvichibvumira mafambiro epamusoro uye kumhanya kwepamusoro kwekushanda. Chimiro cheNPN transistor chinosanganisira mutsetse weP-doped semiconductor material, inonzi "base," iri pakati pezvikamu zviviri zveN-doped material. Muchigadziro che common-emitter, diki ikozvino inoyerera ichipinda mugasi inowedzerwa pa kubuda kwemanifold. Chiratidzo cheNPN transistor chinosanganisira museve unonongedza kune emitter terminal uye kwakanangana neyakajairwa ikozvino panguva yekushanda kwechishandiso.
• PNP Transistors: Rudzi rwechipiri rwebipolar transistor, vane mavara "P" uye "N" anoreva kubhadharisa kwakawanda munzvimbo dzakasiyana dzemudziyo. Kunyange zvazvo zvisinganyanyi kuitika mazuva ano, PNP transistors ine mutsara weN-doped semiconductor zvinhu pakati pezvikamu zviviri zveP-doped material. magetsi kuburikidza nekunze kwemagetsi mutoro. Iyo diki ikozvino inoyerera ichipinda mubhesi inogonesa yakakura zvakanyanya ikozvino kuyerera kubva kune emitter kuenda kumuunganidzi. Museve uri paPNP transistor chiratidzo unowanikwa pane emitter terminal uye inonongedza kune yakajairika ikozvino panguva yekushanda kwechishandiso. Kunyangwe kuderera kwavo kuderera, NPN transistors inofarirwa mumamiriro mazhinji nekuda kwekuita kwavo kurinani.

Iwe unogona kuona zvese zvese mumifananidzo iri pamusoro.

Zvikumbiro zveBJT

Bipolar junction transistors (BJTs) inoshandiswa mumhando dzakasiyana-siyana maapplication mumagetsi, Ini ndakambotaura pane dzimwe nyaya kare, asi pano ini ndinokuratidza rondedzero ine mamwe makuru maapplication kana mashandisiro eiyi transistors:

• Signal amplification: BJTs anowanzo shandiswa kukwidziridza masaini asina kusimba, akadai seaya anobva kumasensa kana maikorofoni, mumaodhiyo neredhiyo frequency maseketi.
• Kuchinja: Iwo anoshandiswa kudzora ikozvino kuchinjika mumadhijitari uye logic maseketi, akadai semagetsi switch, kuitira kuita logic magedhi.
• Power amplifiers: Iwo anoshandiswa mumatanho ekusimudzira simba mumaodhiyo masisitimu uye RF (redhiyo frequency) amplifiers. Muchokwadi, imwe yekutanga maapplication akagadzirirwa aya ma transistors aive eizvi, achitsiva yapfuura vacuum chubhu.
• Energy sources: Iwo anogona kugadzirwa kuti abudise anogara aripo, ayo anobatsira mune mamwe ezvino referensi maseketi uye maapplication. Iwe unovawana zvakare mumagetsi ekudzora masisitimu kana maseketi kuti arambe aine voltage pakubuda kwemagetsi.
• Oscillators: Iwo anoshandiswa mumaseketi oscillator kugadzira zviratidzo zvenguva nenguva, senge mune sine wave jenareta.
• RF kuwedzera: Mune masisitimu ekutaurirana, maBJT anoshandiswa mumatanho eredhiyo frequency signal amplification.
• Amplitude uye frequency modulation: Iwo anoshandiswa mumodulation maseketi kushandura maitiro eodhiyo kana RF masaini. Iwo anogona zvakare kuitwa mune mamwe ma sensor kana ma detectors kuti agadzirise masaini.

Maitiro ekutarisa BJT transistor

Kutarisa BJT transistor kwakakosha kuti ive nechokwadi chekushanda kwayo. Kana iwe uchida kuziva kuti ungazviita sei, iwe unongoda multimeter kana multimeter ine basa iri kutarisa bipolar transistors. Uye nzira yekuenderera nayo iri nyore, iwe unongofanirwa kutevedzera aya matanho:

• BJT NPN: Kutanga iwe unofanirwa kuziva Emitter (E), Base (B) uye Collector (C) zviteshi kana mapini anosanganisira transistor yako. Zvichienderana nemuenzaniso, unogona kubvunza madheti kuti uwane rumwe ruzivo, kunyangwe zviri nyore kuziva. Kana uchinge waona materminal uye multimeter padyo, chinotevera kungoisa mapini nemazvo mumaslots echinangwa ichi. Kana yako multimeter isina basa iri, unogona kushandisa iyi imwe nzira:
  1. Isa iyo multimeter mune transistor test mode, ndiko kuti, shandura vhiri kuti usarudze chiratidzo chekuyera DC voltage (V —).
  2. Bata mapini anodiwa ane multimeter probes:
     • Paunotarisa BE kana Base-Emitter junction, iwe unofanirwa kuona kuverenga kwevoltage pachiratidziri pakati pe0.6 ne0.7v, zvichienderana netransistor.
     • Paunotarisa BC kana Base-Collector junction, iwe unobata aya mamwe materminal uye kuverenga kwevoltage kunofanira kufanana nepamusoro.
     • Kuti utarise kuwana kwazvino (hFE), shandura dhizaini yekusarudza kune iyo hFE basa. Uye nekubata emitter uye base, uye emitter uye muunganidzi ane probes kuona kuwana hFE, inova hukama pakati pezviviri.
• BJT PNP: mune iyi imwe nyaya, ongororo yakafanana, chete nenzira yakapesana neyeNPN.

Kana mhedzisiro yakawanikwa iri hunhu kunze kwezvinotarisirwa, iyo transistor inoratidza kuti haishande kana kuti haina kukanganisa uye inoda kutsiviwa.

Kupi kunotenga BJT

Kana iwe uchida kutenga zvakachipa BJT transistors, unogona kuzviita pane chero chitoro chemagetsi kana nyanzvi yepamhepo papuratifomu. Imwe nzvimbo yaunowana iyi BJT zvishandiso iri paAmazon, uye isu tinokurudzira izvi:

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